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MMBT6427

MMBT6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMBT6427
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 310
  • Description: MMBT6427 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
hFE Min 20000
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 350mW
Current Rating 1.2A
Base Part Number MMBT6427
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 14000 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1.2A
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 40V
See Relate Datesheet

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