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MMBT6427LT1G

MMBT6427LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMBT6427LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 795
  • Description: MMBT6427LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT6427
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 225mW
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Continuous Collector Current 500mA
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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