MMBT6517LT3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 350V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | MMBT6517 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| JEDEC-95 Code | TO-236AB |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 350V |
| Current - Collector (Ic) (Max) | 100mA |
| Transition Frequency | 40MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 350V |
| Emitter Base Voltage (VEBO) | 5V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
