Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 225mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 96.1A |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MMBTA05 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300mW |
Power - Max | 225mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 250mV |
Max Breakdown Voltage | 60V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 4V |
hFE Min | 100 |
Height | 1.11mm |
Length | 3.04mm |
Width | 2.64mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |