Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 225mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 4mA |
Frequency | 650MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MMBTH10 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 225mW |
Halogen Free | Halogen Free |
Gain Bandwidth Product | 650MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 25V |
Max Collector Current | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 650MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 25V |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 60 |
Max Junction Temperature (Tj) | 150°C |
Collector-Base Capacitance-Max | 0.7pF |
Height | 1.11mm |
Length | 3.04mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |