MMBV2109LT1
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Additional Feature | HIGH Q, HIGH RELIABILITY |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 0.225W |
| Diode Type | Single |
| JEDEC-95 Code | TO-236AB |
| Capacitance @ Vr, F | 36.3pF @ 4V 1MHz |
| Voltage - Peak Reverse (Max) | 30V |
| Breakdown Voltage-Min | 30V |
| Frequency Band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| Diode Capacitance-Nom | 33pF |
| Capacitance Ratio | 3.2 |
| Capacitance Ratio Condition | C2/C30 |
| Diode Cap Tolerance | 10% |
| Quality Factor-Min | 200 |
| Q @ Vr, F | 200 @ 4V, 50MHz |
| Variable Capacitance Diode Classification | ABRUPT |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
