MMBV809LT1G
| Parameters | |
|---|---|
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 0.225W |
| Diode Type | Single |
| JEDEC-95 Code | TO-236AB |
| Capacitance @ Vr, F | 6.1pF @ 2V 1MHz |
| Voltage - Peak Reverse (Max) | 20V |
| Breakdown Voltage-Min | 20V |
| Frequency Band | ULTRA HIGH FREQUENCY |
| Diode Capacitance-Nom | 5.3pF |
| Capacitance Ratio | 2.6 |
| Capacitance Ratio Condition | C2/C8 |
| Diode Cap Tolerance | 15.09% |
| Quality Factor-Min | 75 |
| Q @ Vr, F | 75 @ 3V, 500MHz |
| Variable Capacitance Diode Classification | HYPERABRUPT |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | 125°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Additional Feature | HIGH RELIABILITY |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
See Relate Datesheet
