MMDT5401-7-F
| Parameters | |
|---|---|
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 50 |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | -200mA |
| Height | 1.1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 6.010099mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -150V |
| Max Power Dissipation | 200mW |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -200mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MMDT5401 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Polarity | PNP |
| Element Configuration | Dual |
| Power Dissipation | 200mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Transistor Type | 2 PNP (Dual) |
| Collector Emitter Voltage (VCEO) | -150V |
| Max Collector Current | -200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA 5V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | -150V |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | -500mV |
| Max Breakdown Voltage | 150V |
| Collector Base Voltage (VCBO) | -160V |
See Relate Datesheet
