Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Package / Case | SOT-223-4 |
Surface Mount | YES |
Number of Pins | 4 |
Packaging | Cut Tape (CT) |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn80Pb20) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Max Power Dissipation | 800mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 235 |
Reach Compliance Code | not_compliant |
Current Rating | 300mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 800mW |
Case Connection | DRAIN |
Transistor Application | SWITCHING |
Drain to Source Voltage (Vdss) | 60V |
Polarity/Channel Type | N-CHANNEL |
Continuous Drain Current (ID) | 300mA |
JEDEC-95 Code | TO-261AA |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 0.3A |
Drain to Source Breakdown Voltage | 60V |
Input Capacitance | 65pF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 1.7Ohm |
Rds On Max | 1.7 Ω |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |