MMIX1G320N60B3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 24-PowerSMD, 21 Leads |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2011 |
| Series | GenX3™ |
| Pbfree Code | yes |
| Part Status | Active |
| Number of Terminations | 21 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G21 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 1000W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 66ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 400A |
| Power Dissipation-Max (Abs) | 1000W |
| Turn On Time | 107 ns |
| Test Condition | 480V, 100A, 1 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
| Turn Off Time-Nom (toff) | 595 ns |
| IGBT Type | PT |
| Gate Charge | 585nC |
| Current - Collector Pulsed (Icm) | 1000A |
| Td (on/off) @ 25°C | 44ns/250ns |
| Switching Energy | 2.7mJ (on), 5mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
