MMIX1X100N60B3H1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 24-PowerSMD, 21 Leads |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | GenX3™, XPT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 21 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Base Part Number | IXX*N60 |
| JESD-30 Code | R-PDSO-G21 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 400W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 105A |
| Reverse Recovery Time | 140 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Current - Collector (Ic) (Max) | 145A |
| Turn On Time | 92 ns |
| Test Condition | 360V, 70A, 2 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 70A |
| Turn Off Time-Nom (toff) | 350 ns |
| Gate Charge | 143nC |
| Current - Collector Pulsed (Icm) | 440A |
| Td (on/off) @ 25°C | 30ns/120ns |
| Switching Energy | 1.9mJ (on), 2mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
