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MMJT350T1

MMJT350T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMJT350T1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 940
  • Description: MMJT350T1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MMJT350
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2.75W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 300V
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 2.75W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -500mA
See Relate Datesheet

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