MMSF3P02HDR2
| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 567 mJ |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | -3A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 97 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 5.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.075Ohm |
See Relate Datesheet
