Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 75MOhm |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -3A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 25 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 75m Ω @ 3A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 5.6A Ta |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Rise Time | 40ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 97 ns |
Turn-Off Delay Time | 110 ns |
Continuous Drain Current (ID) | 5.6A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 30A |
Avalanche Energy Rating (Eas) | 567 mJ |
Nominal Vgs | 1.5 V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |