Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 59 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 350mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -500mA |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | STA56 |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 1 |
Element Configuration | Single |
Power - Max | 350mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 50MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 250mV |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
Current - Collector Cutoff (Max) | 1μA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 50MHz |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | -4V |
hFE Min | 100 |
VCEsat-Max | 0.25 V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |