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MMUN2131LT1G

TRANS PREBIAS PNP 246MW SOT23-3


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMUN2131LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 782
  • Description: TRANS PREBIAS PNP 246MW SOT23-3 (Kg)

Details

Tags

Parameters
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 8
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 2.2 k Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signals
Voltage - Rated DC -50V
Max Power Dissipation 246mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMUN21**L
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 246mW
See Relate Datesheet

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