Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Box (TB) |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.95 |
Terminal Position | BOTTOM |
JESD-30 Code | O-PBCY-T3 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power - Max | 350mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 15V VGS |
Drain-source On Resistance-Max | 100Ohm |
DS Breakdown Voltage-Min | 30V |
FET Technology | JUNCTION |
Feedback Cap-Max (Crss) | 3.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 500mV @ 10nA |
Voltage - Breakdown (V(BR)GSS) | 30V |
Resistance - RDS(On) | 100Ohm |
RoHS Status | ROHS3 Compliant |