Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Package / Case | DIP |
Transistor Element Material | SILICON |
Published | 2013 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Number of Terminations | 14 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 4 |
Configuration | SEPARATE, 4 ELEMENTS |
Power Dissipation-Max | 750mW |
Polarity/Channel Type | PNP |
Collector Emitter Voltage (VCEO) | 500mV |
Max Collector Current | 500mA |
JEDEC-95 Code | TO-116 |
Collector Emitter Breakdown Voltage | 250V |
Transition Frequency | 50MHz |
Frequency - Transition | 50MHz |
DC Current Gain-Min (hFE) | 25 |
RoHS Status | RoHS Compliant |