MPS3563
| Parameters | |
|---|---|
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 12V |
| Max Power Dissipation | 350W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 850mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 1.5 GHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA 10V |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 14dB @ 200MHz |
| Transition Frequency | 1500MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 2V |
| hFE Min | 20 |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 1.7pF |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
See Relate Datesheet
