MPS6601G
| Parameters | |
|---|---|
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 1V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 100MHz |
| Frequency - Transition | 100MHz |
| Turn Off Time-Max (toff) | 300ns |
| Turn On Time-Max (ton) | 55ns |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 625mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
See Relate Datesheet
