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MPS6601G

MPS6601G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-MPS6601G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 134
  • Description: MPS6601G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi (Kg)

Details

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Parameters
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Frequency - Transition 100MHz
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 55ns
RoHS Status ROHS3 Compliant
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
See Relate Datesheet

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