Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Weight | 201mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Current Rating | 500mA |
Frequency | 100MHz |
Base Part Number | MPSA05 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 250mV |
Max Breakdown Voltage | 60V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 4V |
hFE Min | 100 |
Height | 4.58mm |
Length | 4.58mm |
Width | 3.86mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |