Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2002 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN SILVER COPPER |
Voltage - Rated DC | 20V |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT APPLICABLE |
Reach Compliance Code | unknown |
Current Rating | 10mA |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Application | AMPLIFIER |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA 5V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 10μA, 10mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 12V |
Continuous Collector Current | 450mA |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |