Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Box |
Published | 2012 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA 5V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
Transition Frequency | 100MHz |
Frequency - Transition | 100MHz |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 8V |
Continuous Collector Current | 100mA |
RoHS Status | RoHS Compliant |