Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
JESD-609 Code | e0 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN LEAD |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 625mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA 10V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 100mA |
Transition Frequency | 125MHz |
Frequency - Transition | 125MHz |
RoHS Status | Non-RoHS Compliant |