Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | O-PBCY-W3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 625MW |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 10V |
Current - Collector Cutoff (Max) | 250nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
Voltage - Collector Emitter Breakdown (Max) | 200V |
Current - Collector (Ic) (Max) | 500mA |
Transition Frequency | 50MHz |
Frequency - Transition | 50MHz |
RoHS Status | ROHS3 Compliant |