MPSH10
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Additional Feature | LOW NOISE |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 240 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | O-PBCY-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 350mW |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V |
| JEDEC-95 Code | TO-92 |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Transition Frequency | 650MHz |
| Frequency - Transition | 650MHz |
| Collector Current-Max (IC) | 0.05A |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 0.7pF |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
