MPSH10G
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 350W |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4mA |
| Frequency | 650MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MPSH10 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350W |
| Power - Max | 350mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 650MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 650MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 60 |
| Collector-Base Capacitance-Max | 0.7pF |
| Height | 5.334mm |
| Length | 5.1816mm |
| Width | 4.191mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
