Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 23 hours ago) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2007 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 350W |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 4mA |
Frequency | 650MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MPSH10 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 350W |
Power - Max | 350mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 650MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 25V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V |
Collector Emitter Breakdown Voltage | 25V |
Transition Frequency | 650MHz |
Collector Emitter Saturation Voltage | 500mV |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 60 |
Collector-Base Capacitance-Max | 0.7pF |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |