Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2008 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
HTS Code | 8541.21.00.75 |
Max Power Dissipation | 350mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA 10V |
Collector Emitter Breakdown Voltage | 20V |
Current - Collector (Ic) (Max) | 50mA |
Transition Frequency | 600MHz |
Frequency - Transition | 600MHz |
Highest Frequency Band | VERY HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 0.85pF |
RoHS Status | RoHS Compliant |