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MPSW45AZL1G

MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MPSW45AZL1G
  • Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Datasheet: PDF
  • Stock: 430
  • Description: MPSW45AZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPSW45A
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 1W
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 25000 @ 200mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 40V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 1A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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