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MRF085HR3

WIDEBAND RF POWER LDMOS TRANSIST


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-MRF085HR3
  • Package: NI-650H-4L
  • Datasheet: PDF
  • Stock: 472
  • Description: WIDEBAND RF POWER LDMOS TRANSIST (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case NI-650H-4L
Packaging Tape & Reel (TR)
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Voltage - Rated 133V
Current Rating (Amps) 2μA
Peak Reflow Temperature (Cel) 260
Frequency 1.8MHz~1.215GHz
Time@Peak Reflow Temperature-Max (s) 40
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 25.6dB
Power - Output 85W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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