Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | 355J-02 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Tray |
Published | 2009 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Additional Feature | WITH EMITTER BALLASTING RESISTOR |
Subcategory | Other Transistors |
Max Power Dissipation | 1.46kW |
Terminal Position | DUAL |
Terminal Form | FLAT |
Frequency | 1.15GHz |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | BASE |
Power - Max | 500W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 29A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5A 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 9dB |
Collector Base Voltage (VCBO) | 65V |
Emitter Base Voltage (VEBO) | 3.5V |
hFE Min | 20 |
Continuous Collector Current | 29A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |