Parameters | |
---|---|
Case Connection | SOURCE |
Current - Test | 800mA |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 11.5dB |
DS Breakdown Voltage-Min | 40V |
Power - Output | 70W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 165W |
Voltage - Test | 12.5V |
RoHS Status | Non-RoHS Compliant |
Package / Case | TO-272-8 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Voltage - Rated | 40V |
HTS Code | 8541.21.00.75 |
Subcategory | FET General Purpose Power |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 470MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MRF1570 |
JESD-30 Code | R-PDFM-C8 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 200°C |
Number of Elements | 2 |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Operating Mode | ENHANCEMENT MODE |