MRF581G
| Parameters | |
|---|---|
| JESD-30 Code | O-PRDB-F4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA 5V |
| Collector Emitter Breakdown Voltage | 18V |
| Gain | 13dB ~ 15.5dB |
| Current - Collector (Ic) (Max) | 200mA |
| Transition Frequency | 5000MHz |
| Frequency - Transition | 5GHz |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 3pF |
| Noise Figure (dB Typ @ f) | 3dB ~ 3.5dB @ 500MHz |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Micro-X ceramic (84C) |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | LOW NOISE |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.25W |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | MRF581 |
| Pin Count | 4 |
See Relate Datesheet
