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MRF8S18210WGHSR3

RF MOSFET Transistors HV8 1.8GHZ 210W


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-MRF8S18210WGHSR3
  • Package: NI-880XS-2 GW
  • Datasheet: -
  • Stock: 491
  • Description: RF MOSFET Transistors HV8 1.8GHZ 210W (Kg)

Details

Tags

Parameters
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 1.93GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF8S18210
Operating Temperature (Max) 125°C
Configuration Single
Current - Test 1.3A
Transistor Type N-Channel
Gain 17.8dB
Power - Output 50W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 30V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Package / Case NI-880XS-2 GW
Surface Mount YES
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
See Relate Datesheet

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