MRF8S21200HSR6
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | NI-1230S |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 2.14GHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRF8S21200 |
| JESD-30 Code | R-CDFP-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 2 |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 1.4A |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS (Dual) |
| Gain | 18.1dB |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 48W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
