MRFE6S9125NR1
| Parameters | |
|---|---|
| Frequency | 880MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRFE6S9125 |
| JESD-30 Code | R-PDFP-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 950mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 20.2dB |
| DS Breakdown Voltage-Min | 66V |
| Power - Output | 27W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Package / Case | TO-270AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 66V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
See Relate Datesheet
