MRFE6VP5600HR5
| Parameters | |
|---|---|
| Case Connection | SOURCE |
| Current - Test | 100mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS (Dual) |
| Gain | 25dB |
| DS Breakdown Voltage-Min | 130V |
| Power - Output | 600W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 1670W |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Package / Case | NI-1230-4H |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Voltage - Rated | 130V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 230MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MRFE6VP5600 |
| JESD-30 Code | R-CDFM-F4 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 2 |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
See Relate Datesheet
