Parameters | |
---|---|
Factory Lead Time | 1 Week |
Package / Case | NI-1230S |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | Not Applicable |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Voltage - Rated | 130V |
HTS Code | 8541.29.00.75 |
Subcategory | FET General Purpose Power |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 860MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MRFE6VP8600 |
JESD-30 Code | R-CDFP-F4 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 2 |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 1.4A |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS (Dual) |
Gain | 19.3dB |
DS Breakdown Voltage-Min | 130V |
Power - Output | 125W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 1052W |
Voltage - Test | 50V |
RoHS Status | ROHS3 Compliant |