Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | OBSOLETE (Last Updated: 1 month ago) |
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | M111 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2004 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Additional Feature | WITH EMITTER BALLASTED RESISTORS |
Max Power Dissipation | 270W |
Terminal Position | UNSPECIFIED |
Terminal Form | FLAT |
Pin Count | 3 |
JESD-30 Code | O-PXFM-F6 |
Number of Elements | 1 |
Element Configuration | Common Cathode |
Power - Max | 270W |
Forward Current | 10A |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Max Collector Current | 20A |
Peak Reverse Current | 250μA |
Max Repetitive Reverse Voltage (Vrrm) | 30V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 5A 5V |
Collector Emitter Breakdown Voltage | 18V |
Gain | 6dB |
Peak Non-Repetitive Surge Current | 225A |
Frequency - Transition | 136MHz~175MHz |
Highest Frequency Band | VERY HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 390pF |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |