Parameters | |
---|---|
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | M112 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2004 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Subcategory | Other Transistors |
Max Power Dissipation | 1.35kW |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 2 |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | BASE |
Output Power | 550W |
Power - Max | 1350W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 40A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 250mA 5V |
Collector Emitter Breakdown Voltage | 65V |
Gain | 5.6dB |
Frequency - Transition | 1.025GHz~1.15GHz |
Collector Base Voltage (VCBO) | 65V |
Highest Frequency Band | L B |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |