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MSA1162GT1G

MSA1162GT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MSA1162GT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 673
  • Description: MSA1162GT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 80MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MSA1162
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 200
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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