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MSB1218A-RT1G

MSB1218A-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MSB1218A-RT1G
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 380
  • Description: MSB1218A-RT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 7V
hFE Min 210
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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