MT16VDDF12864HY-40BJ1
| Parameters | |
|---|---|
| Mount | Socket |
| Package / Case | 200-SODIMM |
| Number of Pins | 200 |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 200 |
| Terminal Finish | MATTE TIN |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Subcategory | DRAMs |
| Technology | CMOS |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Supply Voltage | 2.6V |
| Terminal Pitch | 0.6mm |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Operating Supply Voltage | 2.6V |
| Number of Elements | 16 |
| Temperature Grade | COMMERCIAL |
| Max Supply Voltage | 2.7V |
| Min Supply Voltage | 2.5V |
| Memory Size | 1GB |
| Speed | 400MT/s |
| Memory Type | DDR SDRAM |
| Supply Current-Max | 5.52mA |
| Data Bus Width | 64b |
| Organization | 128MX64 |
| Output Characteristics | 3-STATE |
| Memory Width | 64 |
| Standby Current-Max | 0.08A |
| Memory Density | 8589934592 bit |
| Max Frequency | 400MHz |
| Access Time (Max) | 0.7 ns |
| I/O Type | COMMON |
| Refresh Cycles | 8192 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
