Parameters | |
---|---|
Terminal Pitch | 1mm |
Time@Peak Reflow Temperature-Max (s) | 30 |
Operating Supply Voltage | 1.5V |
Number of Elements | 18 |
Temperature Grade | COMMERCIAL |
Max Supply Voltage | 1.575V |
Min Supply Voltage | 1.425V |
Memory Size | 4GB |
Speed | 1333MT/s |
Memory Type | DDR3 SDRAM |
Clock Frequency | 667MHz |
Supply Current-Max | 3.573mA |
Data Bus Width | 72b |
Organization | 512MX72 |
Output Characteristics | 3-STATE |
Memory Width | 72 |
Standby Current-Max | 0.216A |
Memory Density | 38654705664 bit |
Max Frequency | 1.333GHz |
Access Time (Max) | 0.255 ns |
I/O Type | COMMON |
Refresh Cycles | 8192 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Mount | Socket |
Package / Case | 240-RDIMM |
Number of Pins | 240 |
Published | 2010 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 240 |
Terminal Finish | GOLD |
Max Operating Temperature | 70°C |
Min Operating Temperature | 0°C |
Subcategory | Other Memory ICs |
Technology | CMOS |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Supply Voltage | 1.5V |