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MT3S111P(TE12L,F)

RF TRANS NPN 6V 8GHZ PW-MINI


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-MT3S111P(TE12L,F)
  • Package: TO-243AA
  • Datasheet: -
  • Stock: 945
  • Description: RF TRANS NPN 6V 8GHZ PW-MINI (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Configuration Single
Power - Max 1W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 10.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 6000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.3W
Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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