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MT3S111(TE85L,F)

Trans GP BJT NPN 6V 0.1A 3-Pin S-Mini T/R


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-MT3S111(TE85L,F)
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 544
  • Description: Trans GP BJT NPN 6V 0.1A 3-Pin S-Mini T/R (Kg)

Details

Tags

Parameters
Power - Max 700mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 9000MHz
Frequency - Transition 11.5GHz
Power Dissipation-Max (Abs) 0.7W
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Configuration Single
See Relate Datesheet

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