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MT3S111TU,LF

RF SIGE NPN BIPOLAR TRANSISTOR N


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-MT3S111TU,LF
  • Package: 3-SMD, Flat Lead
  • Datasheet: -
  • Stock: 356
  • Description: RF SIGE NPN BIPOLAR TRANSISTOR N (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 800mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA 5V
Gain 12.5dB
Voltage - Collector Emitter Breakdown (Max) 6V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
RoHS Status RoHS Compliant
See Relate Datesheet

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