banner_page

MT3S20P(TE12L,F)

TRANS RF NPN 12V 1GHZ PW-MINI


  • Manufacturer: Toshiba Semiconductor and Storage
  • Nocochips NO: 830-MT3S20P(TE12L,F)
  • Package: TO-243AA
  • Datasheet: -
  • Stock: 922
  • Description: TRANS RF NPN 12V 1GHZ PW-MINI (Kg)

Details

Tags

Parameters
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 1.8W
Reach Compliance Code unknown
Configuration Single
Power - Max 1.8W
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 16.5dB
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good