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MT4HTF3264HZ-667G1

DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM


  • Manufacturer: Micron Technology Inc.
  • Nocochips NO: 533-MT4HTF3264HZ-667G1
  • Package: 200-SODIMM
  • Datasheet: PDF
  • Stock: 647
  • Description: DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM (Kg)

Details

Tags

Parameters
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 200
Terminal Finish MATTE TIN
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Subcategory DRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Time@Peak Reflow Temperature-Max (s) 30
Operating Supply Voltage 1.8V
Number of Elements 4
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 256MB
Speed 667MT/s
Memory Type DDR2 SDRAM
Clock Frequency 333MHz
Data Bus Width 64b
Output Characteristics 3-STATE
Memory Width 64
Standby Current-Max 0.028A
Max Frequency 667MHz
I/O Type COMMON
Refresh Cycles 8192
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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